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DISCRETE SEMICONDUCTORS
DATA SHEET
BUX84; BUX85 Silicon diffused power transistors
Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power transistors
DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. APPLICATIONS * Converters * Inverters * Switching regulators * Motor control systems * Switching applications.
1
MBB008
MBK106
BUX84; BUX85
PINNING PIN 1 2 3 base collector; connected to mounting base emitter DESCRIPTION
2
3
123
Fig.1 Simplified outline (TO-220AB) and symbol.
QUICK REFERENCE DATA SYMBOL VCESM BUX84 BUX85 VCEO collector-emitter voltage BUX84 BUX85 VCEsat IC ICM Ptot tf collector-emitter saturation voltage collector current (DC) collector current (peak value) total power dissipation fall time IC = 1 A; IB = 200 mA; see Fig.7 see Figs 4 and 5 see Figs 4 and 5 Tmb 25 C; see Fig.8 resistive load; see Fig.11 open base - - - - - - 0.4 400 450 1 2 3 40 - V V V A A W s PARAMETER collector-emitter peak voltage VBE = 0 - - 800 1000 V V CONDITIONS TYP. MAX. UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth j-a PARAMETER thermal resistance from junction to mounting base thermal resistance from junction to ambient in free air VALUE 2.5 70 UNIT K/W K/W
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM BUX84 BUX85 VCEO collector-emitter voltage BUX84 BUX85 IC ICM IB IBM IBM Ptot Tstg Tj collector current (DC) collector current (peak value) base current (DC) base current (peak value) base current (reversed; peak value) turn-off current total power dissipation storage temperature junction temperature Tmb 25 C; see Fig.8 see Figs 4 and 5 tp = 2 ms; see Figs 4 and 5 open base - - - - - - - - -65 - PARAMETER collector-emitter peak voltage VBE = 0 - - CONDITIONS
BUX84; BUX85
MIN.
MAX. 800 1000 400 450 2 3 0.75 1 -1 40 +150 150 V V V V A A A A A W
UNIT
C C
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VCEOsust BUX84 BUX85 VCEsat collector-emitter saturation voltage IC = 0.3 A; IB = 30 mA; see Fig.7 PARAMETER collector-emitter sustaining voltage CONDITIONS IC = 100 mA; IBoff = 0; L = 25 mH; see Figs 2 and 3 MIN. 400 450 - TYP. - - - - - - - - - 50 20 MAX. - - 0.8 1 1.1 200 1.5 1 - 100 - MHz UNIT V V V V V A mA mA
IC = 1 A; IB = 200 mA; see Fig.7 - VBEsat ICES base-emitter saturation voltage collector-emitter cut-off current IC = 1 A; IB = 200 mA; see Fig.9 - VCEM = VCEMSmax; VBE = 0; note 1 VCEM = VCEMSmax; VBE = 0; Tj = 125 C; note 1 IEBO hFE emitter-base cut-off current DC current gain VEB = 5 V; IC = 0 VCE = 5 V; IC = 5 A; see Fig.10 VCE = 5 V; IC = 100 mA; see Fig.10 fT transition frequency VCE = 10 V; IC = 200 mA; f = 1 MHz - - - 15 20 -
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84; BUX85
SYMBOL
PARAMETER
CONDITIONS
MIN. - - -
TYP.
MAX.
UNIT s s s
Switching times in horizontal deflection circuit (see Fig.11) ton tf turn-on time fall time ICon = 1 A; IBon = 200 mA; IBoff = -400 mA; VCC = 250 V ICon = 1 A; IBon = 200 mA; IBoff = -400 mA; VCC = 250 V ICon = 1 A; IBon = 200 mA; IBoff = -400 mA; VCC = 250 V; Tmb = 95 C ts Note 1. Measured with a half-sinewave voltage (curve tracer). storage time ICon = 1 A; IBon = 200 mA; IBoff = -400 mA; VCC = 250 V 0.2 0.4 - 0.5 - 1.4
-
2
3.5
s
andbook, halfpage
+ 50 V 100 to 200 L
I halfpage handbook,C (mA) 250 200
MGE239
horizontal oscilloscope
100
vertical 300 1
MGE252
6V 30 to 60 Hz
0
VCE (V) min VCEOsust
Fig.2
Test circuit for collector-emitter sustaining voltage.
Fig.3
Oscilloscope display for collector-emitter sustaining voltage.
1997 Aug 13
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84; BUX85
handbook, full pagewidth
10
MGB940
ICM max IC (A) IC max
= 0.01
tp = 2 s 5 s 10 s
(1) 1
20 s 50 s 100 s 200 s
II I
500 s 10-1 (2) 1 ms
2 ms
5 ms 10 ms DC 10-2
III
IV 10-3 10 102 103 VCE (V) 104
BUX84. Tmb 50 C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. III - Area of permissible operation during turn-on in single transistor converters, provided RBE 100 and tp 0.6 s. IV - Repetitive pulse operation in this region is permissible provided VBE 0 and tp 2 ms. (1) Ptot max and Ptot peak max lines. (2) Second breakdown limits.
Fig.4 Forward bias SOAR.
1997 Aug 13
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84; BUX85
handbook, full pagewidth
10
MGB939
IC (A)
ICM max IC max (1)
= 0.01 tp = 2 s 5 s
1
10 s 20 s 50 s 100 s II 200 s
I
500 s 10-1 (2) 1 ms
2 ms 5 ms 10 ms DC 10-2
III
IV 10-3 10 102 103 VCE (V) 104
BUX85. Tmb 50 C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. III - Area of permissible operation during turn-on in single transistor converters, provided RBE 100 and tp 0.6 s. IV - Repetitive pulse operation in this region is permissible provided VBE 0 and tp 2 ms. (1) Ptot max and Ptot peak max lines. (2) Second breakdown limits.
Fig.5 Forward bias SOAR.
1997 Aug 13
6
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84; BUX85
handbook, full pagewidth
10
MGB863
Zth j-mb (K/W)
=1
0.75 0.50
1
0.33 0.20 0.10 0.05
10-1 P
0.02 0.01 0
=
tp T
tp 10-2 10-3 T 10-2 10-1 1 10 102 tp (ms)
t
103
Fig.6 Transient thermal impedance.
(1)
handbook, full pagewidth
(2)
(3)
(4)
MGB908
4
VCEsat (V) 3
2
1
0 0 0.05 0.1 0.15 0.2 0.25 IB (A) 0.3
(1) IC = 0.3 A.
(2) IC = 0.5 A.
(3) IC = 0.7 A.
(4) IC = 1 A.
Tj = 25 C; solid line: typical values; dotted line: maximum values.
Fig.7 Collector-emitter saturation voltage as a function of base current; typical values.
1997 Aug 13
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84; BUX85
MGD283
MGB904
120 handbook, halfpage Ptot max (%) 80
handbook, halfpage
1.0
VBEsat (V)
(1) (2) (3)
0.75
40
0 0 50 100 Tmb (oC) 150
0.5
0
100
200
IB (mA)
300
Tj = 25 C. (1) IC = 1 A. (2) IC = 0.5 A. (3) IC = 0.3 A.
Fig.9 Fig.8 Power derating curve.
Base-emitter saturation voltage as a function of emitter current; typical values.
102 handbook, halfpage
MGB879
handbook, halfpage
tr 30 ns IB on
MBB731
90% hFE IB typ 10%
t IB off 10 90% IC on
IC
1 10-2
10% 10-1 1 IC (A) 10 ton ts tf t
Fig.10 DC current gain; typical values.
Fig.11 Switching time waveforms with resistive load.
1997 Aug 13
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84; BUX85
handbook, full pagewidth
+25 V BD139 T 100 VIM 100 BD140 30
MGE253
200
680 F
250 100 F D.U.T.
VCC 250V
tp
Vi
50
680 F
tp = 20 s; T = 2 ms; VIM = 15 V.
Fig.12 Test circuit resistive load.
1997 Aug 13
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
PACKAGE OUTLINE Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
BUX84; BUX85
SOT78
E P
A A1 q
D1
D
L2(1)
L1 Q
L
b1
1
2
3
b c
e
e
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1 3.30 2.79 L2 max. 3.0
(1)
P 3.8 3.6
q 3.0 2.7
Q 2.6 2.2
Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC TO-220AB EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11
1997 Aug 13
10
Philips Semiconductors
Product specification
Silicon diffused power transistors
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BUX84; BUX85
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Aug 13
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137067/00/01/pp12
Date of release: 1997 Aug 13
Document order number:
9397 750 02723

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